3 edition of 1991 IEEE International SOI Conference proceedings found in the catalog.
1991 IEEE International SOI Conference proceedings
IEEE International SOI Conference (1991 Vail Valley, Colo.)
|Statement||general chairman, Michael T. Duffy.|
|Contributions||Duffy, Michael T., Institute of Electrical and Electronics Engineers.|
|LC Classifications||TK7871.85 .I16157 1991|
|The Physical Object|
|Pagination||xxii, 183 p. :|
|Number of Pages||183|
|ISBN 10||0780301846, 0780301854, 0780301862|
Microelectronic Engineering 19 () Elsevier SOI MATERIAL PROPERTIES DETERMINED BY ELECTRICAL CHARACTERIZATION P. Rai-Choudhury', R. J. Hillard, J. M. Heddleson', S. R. Weinzierl', T. Abeb, P. Karulkar`, M. Pawlikd 'Solid State Measurements, Inc., Technology Drive, Pittsburgh, PA , USA bShin-Etsu Handotai Co., Ltd., Isobe, Annaka, Cited by: 4. IEEE International Soi Conference Proceedings: October , Marriott at Sawgrass Resort Ponte Vedra Beach Florida/92Ch [Institute of Electrical and Electronics Engineers] on *FREE* shipping on qualifying offers.
IEEE International Soi Conference ISBN ISBN Why is ISBN important? ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book. The digit and digit formats both work. Scan an ISBN with your phone. IEEE International SOI Conference proceedings: Palm Springs, California on *FREE* shipping on qualifying offers.
Proceedings of the annual international conference of the IEEE Engineering in Medicine and Biology Society Imprint New York, N.Y.: Institute of Electrical and Electronics Engineers, Inc., ICCAD ' Proceedings of the IEEE/ACM international conference on Computer-aided design Body-voltage estimation in digital PD-SOI circuits and its .
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Get this from 1991 IEEE International SOI Conference proceedings book library. IEEE International SOI Conference: proceedings, October, Hyatt Regency, Beaver Creek Resort, Vail Valley, Colorado.
[Institute. Get this from a library. SOI Conference, Proceedings., IEEE International. [Institute of Electrical and Electronics Engineers;]. Flicker noise in thin film fully depleted SOI MOSFETs Published in: IEEE International SOI Conference Proceedings.
Article #: Date of Conference: Oct. Date Added to IEEE Xplore: 06 August ISBN Information: Print ISBN: INSPEC. However, the higher floating-body potential in SOI MOSFETs tends to make them less vulnerable to hot-carrier stress.
Published in: IEEE International SOI Conference Proceedings Article #. Abstract: In wafer bonding work directed toward SOI (silicon-on-insulator) technology, an insulating material, usually SiO/sub 2/, present on one or both silicon wafers is sandwiched between the wafers upon bonding. Subsequent thinning of one of the wafers produces a monocrystalline film of desirable thickness separated from the substrate by the insulator.
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Article #: Date of Conference: Oct. Date Added to IEEE Xplore: 06 August ISBN Information: Print ISBN: INSPEC. Proceedings of IEEE International SOI Conference, Silicon-on-insulator (SOI) technology has surged into a position of prominence in recent years. SOI devices provide a viable technology for high-density, large-scale-integration and high performance VLSI circuits.
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Accurate simulation of the bipolar breakdown of ultrathin-film SOI transistors requires the correct balance between the current gain and the impact ionization rate. The current gain is strongly dependent upon bandgap narrowing and SOI film doping. IEEE International SOI Conference RG Journal Impact: * *This value is calculated using ResearchGate data and is based on average citation counts from work published in this journal.
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IEEE International SOI Conference. Proceedings (DLC) (OCoLC) Material Type: Conference publication, Document, Internet resource: Document Type: Internet Resource, Computer File, Journal / Magazine / Newspaper: All Authors / Contributors: Institute of Electrical and Electronics Engineers.; IEEE Electron Devices Society.
ISSN. Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference, Ar sputtering is applied to taper contact side-walls; experimental results show that metal step coverage is significantly improved as compared to conventional wet+dry contact etching without reflow.
Original language: English: Title of host publication: IEEE International SOI Conference Proceedings: Publisher: Publ by IEEE: Pages: Number of pages. I G in p-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that E m is about the same as in bulk devices.
The SOI devices used in this study were p + polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both I D. 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC) The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical ted papers will be peer reviewed.
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The committee is administratively a standing committee of TAB with members from IEEE Technical.J.P. Colinge () Proceedings of the IEEE International SOI Conference, Google Scholar P.
Smeys and J.P. Colinge () Solid-State Electronics, 36, CrossRef Google ScholarCited by: 1.IEEE 21st International Conference on Vacuum Electronics (IVEC) Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting developers will find that.